High-Performance Copper Oxide-Based Heterojunction Bipolar Transistor: Design, Modeling, and Performance Analysis
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Abstract
The goal of this study is to elucidate the step-by-step process of incorporation of a Cu2O confinement layer in an oxide semiconductor-based heterojunction bipolar to explore its impact on gain enhancement. The emitter and collector layers consist of CuO. The material of the base layer is silicon, with a confinement layer with Cu2O added between the emitter and base regions. The transistor is designed as a PNP structure and uses the inherent characteristics of copper oxide as a p-type, which means ion-implant is a high-temperature process, so removing it and fabricating the organic subtract will be conceivable. The research involved the simulation of transistors with and without a Cu2O confinement layer using state-of-the-art semiconductor processing techniques. Simulation results exemplify that proposed the potential barrier caused by the confinement layer prevents the electrons from moving from the base to the emitter layer. The improvement in injection efficiency caused the increase in DC gain. In SILVACO, device parameters, such as doping profile, dimensions, and material properties, were considered and modeled. Finally, the result was as the AC gain escalated to 52dB, the cut-off frequency achieved was 12 GHz, and by considering a wide range of base-emitter voltages the DC gain became >1000. This transistor with an AC gain of 52dB has applications as an audio and radio frequency amplifier and oscillator that generates a periodic waveform, it is useful in signal processing circuits, communication systems, and sensor applications to utilize in sensor circuits to amplify signals from sensors.
