Performance and Geometry Study of Silicon Nanowire-based Field Effect Diodes (FED)

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Year-Number: 2023-3
Yayımlanma Tarihi: 2023-12-31 15:16:24.0
Language : English
Konu : Composite
Number of pages: 116-127
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Abstract

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Abstract

In this study, the integration of the side-contacted field effect diode(S-FED) with the Si nanowire concept is pursued to create a device that maintains a substantial aspect ratio while delivering suitable execution. The nanowire side-contacted FED (NW-SFED), referred to as this apparatus, exhibits the capability to achieve an exceptionally high on/off current ratio, allowing for efficient switching between on and off states. An evaluation of NW-SFED’s performance is conducted to explore how variations in channel length, device width, as well as the dimensions of the n+ and p+ doped regions in the source and drain, respectively, influence its operational characteristics. The impact of the channel length and device width on NW-SFED fabrication turned out to be negligible. In contrast, the thickness of doped regions emerged as the critical parameter in the fabrication process. 

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